A Reliable Spaceborne Memory with a Single Error and Erasure Correction Scheme
A Reliable Spaceborne Memory with a Single Error and Erasure Correction Scheme
复制标题
具有单一错误和擦除校正方案的可靠星载存储器
DOI：
10.1109/tc.1979.1675394
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发表时间：
1979
影响因子：
3.7
通讯作者：
Colin J. Black
中科院分区：
文献类型：
--
作者：
William K. S. Walker;C. Sundberg;Colin J. Black
一项开发高可靠性存储器的计划已经在ESTEC进行了数年。镀线和铁氧体磁芯的星载存储器已经得到了发展并获得了合格，而最近出现的低功耗大规模集成电路存储器使半导体存储器成为星载应用的一个有吸引力的提议。对这些技术进行了简要的讨论和比较。然而，与以前的解决方案一样，即使在传统的单一纠错方案的保护下，半导体存储器的可靠性也不能满足长期空间任务的要求。
A program for the development of a highly reliable memory has been underway for a number ofyears at ESTEC. Plated wire and ferrite core spaceborne memories have been developed and qualified, and the more recent advent of low power LSI memory devices has made the semiconductor memory an attractive proposition for spaceborne applications. These technologies are briefly discussed and compared. However, in common with the previous solutions, the reliability of a semiconductor memory even when protected by a conventional single error correction scheme, did not meet the requirements of long duration space missions.