Catalyst-free synthesis of vertically-aligned ZnO nanowires by nanoparticle-assisted pulsed laser deposition
Catalyst-free synthesis of vertically-aligned ZnO nanowires by nanoparticle-assisted pulsed laser deposition
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DOI：
10.1007/s00339-008-4791-9
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发表时间：
2008-12
期刊：
影响因子：
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通讯作者：
R. Guo;J. Nishimura;M. Matsumoto;D. Nakamura;T. Okada
中科院分区：
文献类型：
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作者：
R. Guo;J. Nishimura;M. Matsumoto;D. Nakamura;T. Okada
采用无催化剂的纳米粒子辅助脉冲激光烧蚀沉积（NAPLD）技术，在Ar和N2气氛下，在蓝宝石衬底上成功制备了垂直排列的ZnO纳米线。在NAPLD中，通过激光烧蚀在背景气体中形成的纳米颗粒用于纳米线的生长。纳米线的表面密度可以通过改变纳米颗粒的密度来控制，这又通过改变烧蚀激光参数（例如能量和重复率）来实现。用脉宽为8 ns的355 nm激光脉冲激发在N2背景气体中合成的单根ZnO纳米线，观察到清晰的受激发射，表明纳米线的质量较高。
Vertically aligned ZnO nanowires have been successfully synthesized onc-cut sapphire substrates by a catalyst-free nanoparticle-assisted pulsed-laser ablation deposition (NAPLD) in Ar and N2background gases. In NAPLD, the nanoparticles formed in the background gas by laser ablation are used for the growth of the nanowires. The surface density of the nanowires can be controlled by varying the density of nanoparticles, which is in turn achieved by varying ablation laser parameters such as the energy and the repetition rate. When single ZnO nanowire synthesized in a N2background gas was excited by 355 nm laser-pulse with a pulse-width of 8 ns, stimulated emission was clearly observed, indicating high quality of the nanowire.