On the 1/f noise of triple-gate field-effect transistors with high-k gate dielectric
On the 1/f noise of triple-gate field-effect transistors with high-k gate dielectric
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DOI：
10.1063/1.3180703
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发表时间：
2009-07
影响因子：
4
通讯作者：
N. Lukyanchikova;N. Garbar;V. Kudina;A. Smolanka;S. Put;C. Claeys;E. Simoen
中科院分区：
文献类型：
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作者：
N. Lukyanchikova;N. Garbar;V. Kudina;A. Smolanka;S. Put;C. Claeys;E. Simoen
研究了在绝缘体上硅（SOI）衬底上制作的三栅鳍式场效应晶体管（finFET）的低频噪声特性。在大多数情况下，1/fγ噪声已经被观察到，对于低频f，γ<1。结果表明，这种类型的噪声可以归因于数量波动和规模与有效器件面积。基于一个简单的隧穿模型，噪声谱密度已被转换为氧化物陷阱密度分布，表现出从Si-SiO2界面的较大距离的衰减。这与具有类似高k栅极堆叠的平面体器件形成对比，并且似乎对于所使用的鳍处理是典型的，而不管进一步的工艺细节，如选择性外延生长、应变SOI或应变诱导帽层的使用。
The low-frequency noise of triple-gate fin field-effect transistors (finFETs) fabricated on silicon-on-insulator (SOI) substrates, with HfO2 or HfSiON gate stacks has been studied. In most cases, 1/fγ noise has been observed with γ<1 for low frequencies f. It is shown that this type of noise can be ascribed to number fluctuations and scales with the effective device area. Based on a simple tunneling model, the noise spectral density has been converted to an oxide trap density profile, exhibiting a decay in Not for larger distances from the Si–SiO2 interface. This stands in contrast with planar bulk devices with a similar high-k gate stack and seems to be typical for the fin processing used, irrespective of further process details, like the use of selective epitaxial growth, strained SOI or strain-inducing cap layers.