Atomic‐Order Thermal Nitridation of Silicon at Low Temperatures
Atomic‐Order Thermal Nitridation of Silicon at Low Temperatures
复制标题
硅的低温原子级热氮化
DOI：
10.1149/1.1838946
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发表时间：
1998
影响因子：
3.9
通讯作者：
J. Murota
中科院分区：
文献类型：
--
作者：
Takeshi Watanabe;Akihiro Ichikawa;M. Sakuraba;T. Matsuura;J. Murota
在300-650℃的nh3环境（124-1400 Pa）中，利用超净低压热壁反应器系统研究了Si（100）的原子级氮化反应。在500°C或更高的温度下，N原子浓度（N N）开始增加，并趋于饱和到一定值（d ~ 5 a, N N ~ 3 × 10 15 cm -2）。在400°C或更低温度下，在h端Si表面，随着nh3暴露时间的增加，Si氢化物减少，当n n接近表面Si原子浓度（6.8 × 10 14 cm -2）时，几乎观察不到Si氢化物。在无h的Si表面，nn增加到~ 2 × 10 14 cm -2，在nh3暴露后立即出现硅氢化物。预计nh3离解吸附在Si悬空键上。发现nh3在Si表面的langmuir型物理吸附和反应可以很好地描述nn。超薄氮化膜具有良好的抗氧化性能。
Atomic-order nitridation of Si(100) in an NH 3 environment (124-1400 Pa) at 300-650°C has been investigated using an ultraclean low pressure hot-wall reactor system. At 500°C or higher, the N atom concentration (n N ) initially increases and tends to saturate to a certain value (d ∼ 5 A, n N ∼ 3 × 10 15 cm -2 ). At 400°C or lower, on the H-terminated Si surface, the Si-hydride decreases with increasing NH 3 exposure time and becomes hardly observed when n N reaches nearly to the surface Si atom concentration (6.8 × 10 14 cm -2 ). On the H-free Si surface, n N increases up to ∼ 2 × 10 14 cm -2 with the appearance of the Si-hydride instantly after NH 3 exposure. It is expected that NH 3 dissociatively adsorbs on the Si dangling bonds. It is found that n N is well described by Langmuir-type physical adsorption and reaction of NH 3 on the Si surace. The ultrathin nitride film shows very good characteristics as a mask against oxidation.