Model for Hydrothermal Growth of Rutile Wires and the Associated Development of Defect Structures
Model for Hydrothermal Growth of Rutile Wires and the Associated Development of Defect Structures
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DOI：
10.1021/cg500743u
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发表时间：
2014-09-01
影响因子：
3.8
通讯作者：
Scheu, Christina
中科院分区：
文献类型：
--
作者：
Wisnet, Andreas;Betzler, Sophia B.;Scheu, Christina
晶体缺陷在决定半导体的电性能方面起着重要作用。水热生长的TiO2金红石纳米线阵列经常用作光伏器件中的电极。然而，它们表现出可能损害性能的特征缺陷结构。这些缺陷的详细扫描和透射电子显微镜研究揭示了它们的内部结构，并暗示了它们的起源。我们提出了一个各向异性的逐层生长模型，结合空间位阻效应和库仑排斥的高原子密度面，可以解释所观察到的V形缺陷级联的纳米线。
Crystal defects play a major role in determining the electrical properties of semiconductors. Hydrothermally grown TiO2 rutile nanowire arrays are frequently used as electrodes in photovoltaic devices. However, they exhibit a characteristic defect structure that may compromise performance. A detailed scanning and transmission electron microscopy study of these defects reveals their internal structure and is suggestive at their origin. We propose an anisotropic layer-bylayer growth model, which combined with steric effects and Coulombic repulsion on high atom-density facets, can explain the observed V-shaped defect cascade in the nanowires.