Cyclotron resonance mass and Fermi energy pinning in the In(AsN) alloy
Cyclotron resonance mass and Fermi energy pinning in the In(AsN) alloy
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DOI：
10.1063/1.3583378
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发表时间：
2011-04-18
影响因子：
4
通讯作者：
Helm, M.
中科院分区：
文献类型：
--
作者：
Drachenko, O.;Patane, A.;Helm, M.
报道了GaAs衬底上生长的中红外合金InAs（1-x）N（x）的回旋共振（CR）实验，x从0%到1.9%。使用磁场高达60 T和太赫兹光子源从3到30太赫兹，我们确定的依赖于x的电子密度和CR质量。载流子密度随着x的增加而增加，伴随着带间光致发光发射的红移，并解释为费米能级钉扎到其在x = 0时的值。在接近1%的x处的高载流子密度（接近10（18）cm（-3））产生仅弱依赖于激发能量的CR质量，显著弱于InAs中的CR质量。(C)2011年美国物理学会。[doi：10.1063/1.3583378]
We report cyclotron resonance (CR) experiments on the midinfrared alloy InAs(1-x)N(x) grown on GaAs with x from 0% to 1.9%. Using magnetic fields up to 60 T and terahertz photon sources from 3 to 30 THz, we determine the dependence on x of the electron density and CR mass. The increase in the carrier density with increasing x is accompanied by a redshift in the interband photoluminescence emission and is explained in terms of the pinning of the Fermi level to its value at x = 0. The high carrier densities (similar to 10(18) cm(-3)) at x similar to 1% give rise to a CR mass that is only weakly dependent on the excitation energy, significantly weaker than that in InAs. (C) 2011 American Institute of Physics. [doi: 10.1063/1.3583378]