Growth, characterization, and properties of carbon nitride with and without silicon addition
Growth, characterization, and properties of carbon nitride with and without silicon addition
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DOI：
10.1142/s0217979200000340
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发表时间：
2000-01
影响因子：
1.7
通讯作者：
Li‐Chyong Chen;C. Wu;J. Wu;Kuei-Hsien Chen
中科院分区：
文献类型：
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作者：
Li‐Chyong Chen;C. Wu;J. Wu;Kuei-Hsien Chen
采用微波等离子体化学气相沉积、电子回旋共振等离子体化学气相沉积、磁控溅射和离子束溅射等方法生长了氮化碳和氮化硅。根据具体的工艺细节，已经证明了广泛的微观结构和形态。研究了CN网络中添加Si对沉积材料结构的影响。虽然Si在CVD过程中的参与对晶体生长至关重要，但过量的Si掺入导致在PVD过程中形成非晶相。各种光学常数，包括带隙和折射率的SiCN相也报道。
Carbon nitride and silicon carbon nitride have been grown by microwave plasma chemical vapor deposition, electron-cyclotron-resonance plasma chemical vapor deposition, magnetron sputtering and ion beam sputtering. Depending on the specific process details, a wide range of microstructure and morphologies has been demonstrated. Effects of Si addition to CN network on the structure of the deposited materials were studied. While Si involvement in CVD process was crucial for crystal growth, excessive Si incorporation led to formation of amorphous phase in PVD process. Various optical constants including the band gap and refractive index of the SiCN phases are also reported.