Nonlinear optical response and spin-charge separation in one-dimensional Mott insulators
Nonlinear optical response and spin-charge separation in one-dimensional Mott insulators
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DOI：
10.1103/physrevb.62.r4769
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发表时间：
2000-08-15
影响因子：
3.7
通讯作者：
Maekawa, S
中科院分区：
文献类型：
--
作者：
Mizuno, Y;Tsutsui, K;Maekawa, S
从理论上研究了Mott绝缘体的非线性光学响应和光激发态。用精确对角化技术计算了小团簇的非线性光学极化率X_i((3))。通过对一维Mott绝缘体CHI((3))随维度变化的系统研究，发现自旋-电荷分离对提高CHI((3))起着至关重要的作用。在此基础上，提出了描述一维Mott绝缘子非线性响应的Holon-Doublon模型。这些发现表明，自旋-电荷分离将成为光电子器件的一个关键概念。
We theoretically study the nonlinear optical response and photoexcited states of the Mott insulators. The nonlinear optical susceptibility chi((3)) is calculated by using the exact diagonalization technique on small clusters. From the systematic study of the dependence of chi((3)) on dimensionality, we find that the spin-charge separation plays a crucial role in enhancing chi((3)) in the one-dimensional (1D) Mott insulators. Based on this result, we propose a holon-doublon model, which describes the nonlinear response in the 1D Mott insulators. These findings show that the spin-charge separation will become a key concept of optoelectronic devices.