MOVPE growth mechanisms of dilute bismide III/V alloys
MOVPE growth mechanisms of dilute bismide III/V alloys
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DOI：
10.1088/0268-1242/30/9/094017
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发表时间：
2015-07
影响因子：
1.9
通讯作者：
P. Ludewig;L. Nattermann;W. Stolz;K. Volz
中科院分区：
文献类型：
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作者：
P. Ludewig;L. Nattermann;W. Stolz;K. Volz
综述了金属有机物气相外延（MOVPE）在GaAs衬底上生长Ga（AsBi）的研究进展。发展了一个包括Bi偏析的生长模型，并详细研究了几个生长参数的影响，如所施加的生长温度，生长速率和前体的分压。此外，效果，超出纯源分解，所需的高度亚稳态材料系统的沉积的低生长温度进行了总结。优化的生长条件，使Ga（AsBi）层的沉积具有超过7%的Bi，表现出强烈的室温光致发光，而无需退火的必要性。Bi在生长期间充当表面活性剂，其降低晶体的缺陷密度和无意的碳掺杂。除了使用已建立的Bi前体三甲基铋（TMBi），Ga（AsBi）的生长与替代Bi前体三叔丁基铋（TTBBi）和三异丙基铋（TIPBi）进行了讨论。此外，第一个结果的Ga（AsBi）含有电泵浦单量子阱激光器与MOVPE生长。这些器件可能在未来实现高效率的红外激光器件。
This paper summarizes the present understanding of the growth of Ga(AsBi) on GaAs substrates using metal organic vapor phase epitaxy (MOVPE). A growth model including Bi segregation is developed and the influence of several growth parameters, such as the applied growth temperature, the growth rate and the partial pressures of the precursors, are investigated in detail. Also, effects, beyond pure source decomposition, of the low growth temperature needed for the deposition of the highly metastable material system are summarized. Optimizing the growth conditions enables the deposition of Ga(AsBi) layers with more than 7% Bi that show strong room temperature photoluminescence without the necessity of annealing. Bi acts as a surfactant during the growth that reduces the defect density and unintentional carbon doping of the crystals. Besides using the established Bi precursor trimethylbismuth (TMBi), the growth of Ga(AsBi) with alternative Bi precursors tritertiarybutylbismuth (TTBBi) and triisopropylbismuth (TIPBi) is discussed. Furthermore, first results on Ga(AsBi) containing an electrically pumped single quantum well laser grown with MOVPE are presented. These devices might enable high efficiency infrared laser devices in future.