The efficacy of error mitigation techniques for DRAM retention failures

The efficacy of error mitigation techniques for DRAM retention failures
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错误缓解技术对 DRAM 保留故障的功效

DOI:
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发表时间:
2014
期刊:
影响因子:
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通讯作者:
O. Mutlu
O. Mutlu
中科院分区:
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文献类型:
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作者:
S. Khan;Donghyuk Lee;Yoongu Kim;Alaa R. Alameldeen;C. Wilkerson;O. Mutlu

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随着DRAM单元持续缩小,它们变得更容易发生保持故障。永久显示短保留时间的DRAM单元相当容易通过使用来识别和修复。
As DRAM cells continue to shrink, they become more susceptible to retention failures. DRAM cells that permanently exhibit short retention times are fairly easy to identify and repair through the us...