Global dynamic FET model for GaN transistors: DynaFET model validation and comparison to locally tuned models
Global dynamic FET model for GaN transistors: DynaFET model validation and comparison to locally tuned models
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DOI：
10.1109/arftg.2014.6899526
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发表时间：
2014-06
期刊：
影响因子：
--
通讯作者：
Jianjun Xu;S. Halder;F. Kharabi;J. McMacken;J. Gering;D. Root
中科院分区：
文献类型：
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作者：
Jianjun Xu;S. Halder;F. Kharabi;J. McMacken;J. Gering;D. Root
大量的结果验证了最近改进的大信号FET模型--DYNAFET适用于RFMD制造的先进的6×75um外围、0.5um栅长的GaN HFET晶体管。在非常宽的偏置条件、复杂的负载、功率和频率范围内，直流(包括泄漏电流)、S参数与频率和温度的关系、谐波和互调失真以及负载-拉动品质因数都获得了出色的结果。该模型具有详细的栅极和漏极滞后的动态陷阱和去陷阱机制，以及动态自加热。多变量本构关系由人工神经网络(ANN)表示，ANN由基于有源注入NVNA的表征程序获得的大信号波形数据训练而成。新模型与两个经验模型进行了比较，每个模型都是从不同静态偏置点的脉冲I-V数据中独立提取的，并针对特定的应用进行了调整。结果表明，即使在调谐条件下，动态场效应管模型也比单独调谐的模型具有更好的拟合度。新的全局模型在器件的整个工作范围内都足够准确，不需要针对不同的工作点或放大器类别调整模型参数。该模型在暂态、谐波平衡、包络和所有其他仿真模式下运行。
Extensive results are presented validating a recently enhanced large signal FET model, DynaFET, applied to an advanced 6×75um periphery, 0.5um gate-length GaN HFET transistor, manufactured by RFMD. Excellent results are achieved for DC (including leakage current), S-parameters versus frequency and temperature, harmonic and intermodulation distortion, as well as load-pull figures of merit, over a very wide range of bias conditions, complex loads, powers, and frequencies. The DynaFET model features detailed dynamic trapping and de-trapping mechanisms for gate and drain lag, and dynamic self-heating. The multi-variate constitutive relations are represented by artificial neural networks (ANNs) trained from large-signal waveform data obtained using an active source injection NVNA-based characterization procedure. The new model is compared with two empirical models, each independently extracted from pulsed I-V data from different quiescent bias points and tuned for specific applications. The DynaFET model is demonstrated to have a much better fit than each of the individually tuned models, even at the tuned conditions. The new global model is sufficiently accurate over the entire operating range of the device that no tuning of model parameters is required for different operating points or amplifier classes of operation. The model runs in transient, harmonic balance, envelope, and all other simulation modes.