MOSFETs Made From GaN Nanowires With Fully Conformal Cylindrical Gates
MOSFETs Made From GaN Nanowires With Fully Conformal Cylindrical Gates
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由 GaN 纳米线制成的具有完全共形圆柱形栅极的 MOSFET
DOI：
10.1109/tnano.2011.2177993
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发表时间：
2012
影响因子：
2.4
通讯作者：
D. Seghete
中科院分区：
文献类型：
--
作者：
P. Blanchard;K. Bertness;T. Harvey;A. Sanders;N. Sanford;S. George;D. Seghete
我们报告了一种新型的金属氧化物半导体场效应晶体管（MOSFET）的基础上单独的氮化镓（GaN）纳米线与完全共形的圆柱形栅极。采用原子层沉积法制备了W/Al_2O_3栅。反向偏置击穿电压超过了测试的最大栅极电压（-35 V）。纳米线MOSFET表现出完全夹断，阈值电压在-4 V和-12 V之间。最大跨导超过10 μS，通/断电流比大于10 8。还存在显著的门控滞后和记忆效应，指示电荷陷阱。虽然还需要进一步优化，但这些结果代表了高效GaN异质结FET开发的一个有希望的进步。
We report novel metal-oxide-semiconductor field effect transistors (MOSFETs) based on individual gallium nitride (GaN) nanowires with fully conformal cylindrical gates. The W/Al2O3 gates were deposited by atomic layer deposition. Reverse-bias breakdown voltages exceeded the largest gate voltage tested (-35 V). The nanowire MOSFETs showed complete pinchoff, with threshold voltages between -4 and -12 V. Maximum transconductances exceeded 10 μS, and ON/OFF current ratios higher than 10 8 were measured. Significant gating hysteresis and memory effects were also present, indicative of charge traps. Although further optimization is needed, these results represent a promising step forward in the development of efficient GaN nanowire-based FETs.