High-performance crosslinked colloidal quantum-dot light-emitting diodes
High-performance crosslinked colloidal quantum-dot light-emitting diodes
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DOI：
10.1038/nphoton.2009.92
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发表时间：
2009-06-01
期刊：
影响因子：
35
通讯作者：
Kim, Jong Min
中科院分区：
文献类型：
--
作者：
Cho, Kyung-Sang;Lee, Eun Kyung;Kim, Jong Min
胶体量子点发光二极管由于其颜色易调谐、亮度高、发射带宽窄等优点，近年来受到了人们的广泛关注。尽管在亮度、效率和寿命方面有了很大的进步，但由于空穴和电子注入量子点层的高能垒，器件的性能仍然受到限制。在这里，我们证明了通过胶体量子点层的交联，利用溶胶-凝胶二氧化钛层进行电子传输，可以大大降低红色发光量子点发光二极管中的电荷注入势垒。器件结构与全解决方案器件制作兼容，所得到的器件具有高亮度(12,380cdm(-2))、低开启电压(1.9V)和高功率效率(2.41lmW-1)。将该技术集成到具有有源矩阵驱动背板的显示设备中表明，该方法有望用于高性能、易于制造的大面积显示器和照明源。
Colloidal quantum-dot light-emitting diodes have recently received considerable attention due to their ease of colour tunability, high brightness and narrow emission bandwidth. Although there have been rapid advances in luminance, efficiency and lifetime, device performance is still limited by the large energy barriers for hole and electron injection into the quantum-dot layer. Here, we show that by crosslinking the colloidal quantum-dot layer, the charge injection barrier in a red-light-emitting quantum-dot light-emitting diode may be considerably reduced by using a sol-gel TiO2 layer for electron transport. The device architecture is compatible with all-solution device fabrication and the resulting device shows a high luminance (12,380 cd m(-2)), low turn-on voltage (1.9 V) and high power efficiency (2.41 lm W-1). Incorporation of the technology into a display device with an active matrix drive backplane suggests that the approach has promise for use in high-performance, easy-to-fabricate, large-area displays and illumination sources.