Improvement of quantum efficiency by employing active-layer-friendly lattice-matched InAlN electron blocking layer in green light-emitting diodes
Improvement of quantum efficiency by employing active-layer-friendly lattice-matched InAlN electron blocking layer in green light-emitting diodes
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DOI：
10.1063/1.3353995
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发表时间：
2010-03-08
影响因子：
4
通讯作者：
Ponce, Fernando A.
中科院分区：
文献类型：
--
作者：
Kim, Hee Jin;Choi, Suk;Ponce, Fernando A.
使用晶格匹配的 InAlN 电子阻挡层提高了绿光发光二极管的内部量子效率。由于器件有源区中更好的电子限制，获得了更高的电致发光强度。还发现器件效率显着取决于 InAlN 生长温度。在接近 840 摄氏度的优化 InAlN 生长会导致比接近 780 摄氏度时更低的生长速率和更长的生长时间。观察到的在较高温度下生长的 InAlN 层发射效率的降低可能归因于绿色有源区域中的热损伤。 (C) 2010 年美国物理研究所。 [号码：10.1063/1.3353995]
Improvement of the internal quantum efficiency in green-light emitting diodes has been achieved using lattice-matched InAlN electron-blocking layers. Higher electroluminescence intensities have been obtained due to better electron confinement in the device active region. The device efficiency has also been found to significantly depend on the InAlN growth temperature. Optimized InAlN growth at similar to 840 degrees C results in a lower growth rate and longer growth times than at similar to 780 degrees C. The observed reduction in emission efficiency for InAlN layers grown at higher temperatures is possibly attributed to thermal damage in the green active region. (C) 2010 American Institute of Physics. [doi: 10.1063/1.3353995]