Fabrication of semiconductor Kagome lattice structure by selective area metalorganic vapor phase epitaxy
Fabrication of semiconductor Kagome lattice structure by selective area metalorganic vapor phase epitaxy
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DOI：
10.1063/1.1593823
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发表时间：
2003-07
影响因子：
4
通讯作者：
P. Mohan;F. Nakajima;M. Akabori;J. Motohisa;T. Fukui
中科院分区：
文献类型：
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作者：
P. Mohan;F. Nakajima;M. Akabori;J. Motohisa;T. Fukui
由量子线形成的人工二维半导体Kagome晶格结构，即使没有任何磁性元素，当平面带半填充时也能显示出铁磁性。本文报道了这种Kagome晶格结构的实验实现。在GaAs (111)B衬底上采用选择性区金属有机气相外延的方法，制备了具有不同图案周期的GaAs量子线结构。为了克服横向过度生长和改善小周期图案的形状，采用了流速调制外延，有效地生长了周期为1 μm的GaAs Kagome晶格结构。
Artificial two-dimensional semiconductor Kagome lattice structures formed by quantum wires can show ferromagnetism when the flatband is half filled, even though it does not have any magnetic elements. Experimental realization of such a Kagome lattice structure is reported. The structure, with different pattern periods, was formed with GaAs quantum wires by selective area metalorganic vapor phase epitaxy on GaAs (111)B substrates. To overcome the lateral overgrowth and to improve the shape of smaller period pattern, flow rate modulation epitaxy was employed and a GaAs Kagome lattice structure with 1 μm period was effectively grown.