Oxidation‐enhanced or retarded diffusion and the growth or shrinkage of oxidation‐induced stacking faults in silicon
Oxidation‐enhanced or retarded diffusion and the growth or shrinkage of oxidation‐induced stacking faults in silicon
复制标题
硅中氧化增强或延迟扩散以及氧化引起的堆垛层错的生长或收缩
DOI：
10.1063/1.93200
复制
发表时间：
1982
影响因子：
4
通讯作者：
U. Gösele
中科院分区：
文献类型：
--
作者：
T. Tan;U. Gösele
根据堆垛层错生长/收缩现象，对获得氧化增强或延迟掺杂剂扩散（OED或ORD）的条件进行了分析，用于Si的氧化，假设空位和Si自非晶在高温下共存，并且在氧化期间达到点缺陷的局部平衡。结果表明，Sb的异常值可以得到定量解释。在大多数氧化条件下，SiO2-Si界面充当Si自晶的来源，但在足够高的温度和长的氧化时间下，SiO2-Si界面充当Si自晶的汇（或等效地作为空位的来源）。我们提出了一个模型，这个水槽行为在界面处的SiO分子的形成和随后的扩散到SiO2膜。
An analysis of the conditions for obtaining oxidation‐enhanced or retarded dopant diffusions (OED or ORD), in accordance with the stacking fault growth/shrinkage phenomena, is carried out for the oxidation of Si by assuming that vacancy and Si self‐interstitials coexist at high temperatures and that during oxidation a local equilibrium of point defects is attained. It is shown that the Sb ORD data can be explained quantitatively. Under most oxidation conditions the SiO2‐Si interface acts as a source of Si self‐interstitials, but at sufficiently high temperatures and long oxidation times the SiO2‐Si interface behaves as a sink for Si self‐interstitials (or equivalently as a source of vacancies). We suggest a model for this sink behavior in terms of the formation of SiO molecules at the interface and of their subsequent diffusion into the SiO2 film.