Light extraction from GaN-based light emitting diode structures with a noninvasive two-dimensional photonic crystal
Light extraction from GaN-based light emitting diode structures with a noninvasive two-dimensional photonic crystal
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DOI：
10.1063/1.3067837
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发表时间：
2009-01-12
影响因子：
4
通讯作者：
Petroff, P. M.
中科院分区：
文献类型：
--
作者：
Truong, T. A.;Campos, L. M.;Petroff, P. M.
一种涉及软纳米压印光刻的非侵入性制造工艺用于在二氧化钛膜中图案化光子晶体（PhC）以增强从GaN发光二极管（LED）的光提取。该技术避免了蚀刻工艺对LED结构的损坏，而光致发光测量显示出从量子威尔斯发射的提取模式，其与建模很好地吻合。使用这种非侵入性PhC测量光提取改善1.8倍。
A noninvasive fabrication process involving soft nanoimprint lithography is used to pattern a photonic crystal (PhC) in titania film for enhanced light extraction from a GaN light emitting diode (LED). This technique avoids damaging the LED structure by the etching process, while photoluminescence measurements show extracted modes emitted from the quantum wells which agree well with modeling. A light extraction improvement of 1.8 times is measured using this noninvasive PhC.