SnS(2)@C Hollow Nanospheres with Robust Structural Stability as High-Performance Anodes for Sodium Ion Batteries.
SnS(2)@C Hollow Nanospheres with Robust Structural Stability as High-Performance Anodes for Sodium Ion Batteries.
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具有鲁棒结构稳定性的 SnS2@C 空心纳米球作为钠离子电池的高性能阳极
DOI：
10.1007/s40820-019-0243-7
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发表时间：
2019-02-21
影响因子：
26.6
通讯作者：
Li D
中科院分区：
文献类型：
--
作者：
Li S;Zhao Z;Li C;Liu Z;Li D
合成了核壳结构的SnS2@C空心纳米球。均匀的碳涂层和中空结构可以减轻机械应变，从而改善电化学性能。本文的在线版本（10.1007/s40820-019-0243-7）包含补充材料，可供授权用户使用。在钠存储材料中构建具有大量电活性位点的独特且高度稳定的结构是通过有利的钠离子扩散动力学实现改善电化学性能的关键因素。设计并制备了SnS2@C空心纳米球（SnS2@C）。SnS2@C杂化物具有理想的中空结构、丰富的活性位点、大的电极/电解质界面、缩短的离子传输路径，并且重要的是，具有用于体积变化的缓冲空间，所述体积变化由钠离子的重复插入/提取产生。这些优点显著增强了电化学反应过程中的结构完整性，并改善了钠存储性能，在0.2 A g− 1的电流密度下200次循环后具有626.8 mAh g− 1的高可逆比容量和上级的高倍率性能（5 A g−1时为304.4 mAh g− 1）。本文的在线版本（10.1007/s40820-019-0243-7）包含补充材料，可供授权用户使用。
Core–shell structured SnS2@C hollow nanospheres were synthesized. The uniform carbon coating and hollow structure can alleviate the mechanical strain and therefore electrochemical performance. The online version of this article (10.1007/s40820-019-0243-7) contains supplementary material, which is available to authorized users. Constructing unique and highly stable structures with plenty of electroactive sites in sodium storage materials is a key factor for achieving improved electrochemical properties through favorable sodium ion diffusion kinetics. An SnS2@carbon hollow nanospheres (SnS2@C) has been designed and fabricated via a facile solvothermal route, followed by an annealing treatment. The SnS2@C hybrid possesses an ideal hollow structure, rich active sites, a large electrode/electrolyte interface, a shortened ion transport pathway, and, importantly, a buffer space for volume change, generated from the repeated insertion/extraction of sodium ions. These merits lead to the significant reinforcement of structural integrity during electrochemical reactions and the improvement in sodium storage properties, with a high specific reversible capacity of 626.8 mAh g−1 after 200 cycles at a current density of 0.2 A g−1 and superior high-rate performance (304.4 mAh g−1 at 5 A g−1). The online version of this article (10.1007/s40820-019-0243-7) contains supplementary material, which is available to authorized users.
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