Proximity effect at superconducting Sn-Bi2Se3 interface
Proximity effect at superconducting Sn-Bi2Se3 interface
复制标题
超导 Sn-Bi2Se3 界面的邻近效应
DOI：
10.1103/physrevb.85.104508
复制
发表时间：
2012-03-14
影响因子：
3.7
通讯作者：
Lu, Li
中科院分区：
文献类型：
--
作者：
Yang, Fan;Ding, Yue;Lu, Li
我们研究了Sn-Bi2Se3界面结在250mK和不同磁场下的电导谱。在Sn的超导转变温度以下，观察到许多电导异常，包括与Sn不同的小间隙，以及在较低温度下增加的零偏导峰。我们讨论了小间隙和零偏电导峰的可能来源。这些现象支持了在超导锡和强自旋轨道耦合材料Bi2Se3之间的界面上形成了邻近效应诱导的手性超导相的观点。
We have investigated the conductance spectra of Sn-Bi2Se3 interface junctions down to 250mK and in different magnetic fields. A number of conductance anomalies were observed below the superconducting transition temperature of Sn, including a small gap that is different from that of Sn, and a zero-bias conductance peak that increases at lower temperatures. We discussed the possible origins of the smaller gap and the zero-bias conductance peak. These phenomena support the idea that a proximity-effect-induced chiral superconducting phase is formed at the interface between the superconducting Sn and the strong spin-orbit coupling material Bi2Se3.