4H SiC betavoltaic powered temperature transducer
4H SiC betavoltaic powered temperature transducer
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DOI：
10.1063/1.2767780
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发表时间：
2007-07-30
影响因子：
4
通讯作者：
Lal, Amit
中科院分区：
文献类型：
--
作者：
Chandrashekhar, M. V. S.;Duggirala, Rajesh;Lal, Amit
4 H SiC p-n二极管β伏打电池的开路电压响应于温度的变化用于感测温度。在24 ~ 86 ℃范围内，线性灵敏度为2.7mV/K。这是用仅2.5 μ Ci的活性镍-63作为β源实现的，得到21 pA的短路电流，对于民用应用来说足够低的活性。测得的灵敏度为2.7 mV/K，低于理论预测的5.5 mV/K。β伏打电池的28 G Ω分流电阻用于解释较低的灵敏度。(C)2007年，美国物理学会。
The change in open-circuit voltage of a 4H SiC p-n diode betavoltaic cell in response to temperature was used to sense temperature. A linear sensitivity of 2.7 mV/K was obtained from 24 to 86 degrees C. This was achieved with only 2.5 mu Ci of active nickel-63 as the beta source, giving a short circuit current of 21 pA, a low-enough activity for civilian applications. The measured sensitivity of 2.7 mV/K was lower than the 5.5 mV/K predicted from the theory. The 28 G Omega shunt resistance of the betavoltaic cell was used to explain the lower sensitivity. (C) 2007 American Institute of Physics.