Metal-Doped Magnetite Thin Films
Metal-Doped Magnetite Thin Films
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金属掺杂磁铁矿薄膜
DOI：
10.1166/jnn.2012.4900
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发表时间：
2012
影响因子：
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通讯作者：
S. Ohnuma
中科院分区：
文献类型：
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作者：
S. Abe;D .H. Ping;S. Nakamura;M. Ohnuma;S. Ohnuma
本文研究了含有少量金属元素的磁铁矿（Fe3O4）薄膜。该薄膜是用陶瓷氧化铁与金属碎片的复合靶材通过射频溅射制备的。含5.3%Ge的磁铁矿的低温磁化表明薄膜中含有一些弱磁耦合晶粒。金属元素 Mg 还原赤铁矿 (α-Fe2O3) 和磁铁矿，产生单相方铁矿 (Fe1–x O)。相比之下，添加Ge选择性地还原赤铁矿，而磁铁矿保持不反应。根据反应自由能，Ge元素只能还原赤铁矿，而Mg元素既能还原赤铁矿，又能还原磁铁矿。该性质与实验结果非常吻合。
This paper investigates magnetite (Fe3O4) thin film containing a small amount of a metal element. The films are prepared by rf sputtering with a composite target of ceramic iron oxide with metal chips. Low-temperature magnetization of magnetite containing 5.3%Ge reveals that the film contains some magnetically weak coupling grains. The metal element Mg reduces both hematite (α-Fe2O3) and magnetite, resulting in single-phase wüstite (Fe1–x O). In contrast, adding Ge selectively reduces hematite, while magnetite remains unreactive. According to the free energy of reaction, the element Ge is able to reduce hematite only, whereas the element Mg is capable of reducing both hematite and magnetite. This property is in good agreement with the experiment results.