A Study of Moisture Effects on Ti/Porous Silicon/Silicon Schottky Barrier

A Study of Moisture Effects on Ti/Porous Silicon/Silicon Schottky Barrier
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DOI：
10.1023/a:1009634720436
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发表时间：
2000
期刊：
Journal of Porous Materials
影响因子：
2.6
通讯作者：
V. Strikha;V. Skryshevsky;V. Polishchuk;É. Souteyrand;J. R. Martin
V. Strikha;V. Skryshevsky;V. Polishchuk;É. Souteyrand;J. R. Martin
中科院分区：
材料科学4区
文献类型：
--
作者：
V. Strikha;V. Skryshevsky;V. Polishchuk;É. Souteyrand;J. R. Martin

文献摘要

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给出了Ti/多孔硅（PS）/p-Si二极管结构的电容-电压和电流-电压测量结果。在f < 10000 Hz下，响应于从0到50%的水分变化，观察到电导率和容量增加5-10。利用多孔硅和PS/Si界面的肖特基接触模型解释了电导率/电容的频率依赖性和湿度效应。
Results of capacitance-voltage and current-voltage measurements performed on Ti/porous silicon (PS)/p-Si diode structures are presented. A 5–10 increase of conductivity and capacity has been observed at f < 10000 Hz in response to the moisture change from 0 to 50%. Model of Schottky contact on thin PS layer with the charge carriers inside of pores and PS/Si interface is applied to explain the frequency dependence of conductivity/capacity as well as moisture effect.