Reduction of activation temperature at 150°C for IGZO films with improved electrical performance via UV-thermal treatment
Reduction of activation temperature at 150°C for IGZO films with improved electrical performance via UV-thermal treatment
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DOI：
10.1080/15980316.2016.1172524
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发表时间：
2016-04
影响因子：
3.7
通讯作者：
Y. J. Tak;S. Park;Tae Soo Jung;Heesoo Lee;Won-Gi Kim;J. Park;Hyun Jae Kim
中科院分区：
文献类型：
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作者：
Y. J. Tak;S. Park;Tae Soo Jung;Heesoo Lee;Won-Gi Kim;J. Park;Hyun Jae Kim
ABSTRACT Activation using the simultaneous UV-thermal (U-T) treatment of sputter-processed InGaZnO (IGZO) thin-film transistors (TFTs) is suggested. This treatment was performed to lower the activation temperature from 300°C (thermal activation alone) to 150°C as well as to improve the electrical characteristics and stability. Despite the low temperature, the U-T-treated devices showed superior electrical characteristics and stability compared to the devices that were only thermally activated (300°C): the mobility improved from 5.19 ± 1.8 to 16.20 ± 1.5 cm2/Vs, the on-off ratio increased from (5.58 ± 3.21) × 108 to (2.50 ± 2.23) × 109, and the threshold voltage shift (under positive bias stress for 1000 s) decreased from 7.1 to 2.2 V. These improvements are attributed to the following two contributions: (1) generation of reactive oxygen radical at a low temperature and (2) decomposition-rearrangement of the metal oxide (MO) bonds in the IGZO active layer. Contributions (1) and (2) effectively increased the MO bonds and decreased the defect-site-related oxygen vacancies.
