3D global analysis of CZ‐Si growth in a transverse magnetic field with rotating crucible and crystal
3D global analysis of CZ‐Si growth in a transverse magnetic field with rotating crucible and crystal
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DOI：
10.1002/crat.200410349
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发表时间：
2005-04
影响因子：
1.5
通讯作者：
Lijun Liu;K. Kakimoto
中科院分区：
文献类型：
--
作者：
Lijun Liu;K. Kakimoto
采用最近开发的全局模型对小型直拉硅单晶炉进行了三维全局模拟。该炉放置在横向磁场中，坩埚和晶体旋转。整个炉内的对流、传导和辐射传热以三维共轭的方式求解。分析了温度和速度的三维分布。发现熔体-晶体界面具有近似旋转对称性，并且在坩埚和晶体的高旋转速率的情况下，晶体和坩埚侧壁上的温度的方位不均匀性比在非旋转坩埚和晶体的情况下弱得多。（© 2005 WILEY‐VCH Verlag GmbH & Co. KGaA，魏因海姆）
Three‐dimensional global simulations were carried out for a small Czochralski furnace for silicon crystal growth with a recently developed global model. The furnace is placed in a transverse magnetic field with rotating crucible and crystal. The convective, conductive and radiative heat transfers in the entire furnace were solved in a three‐dimensionally conjugated way. Three‐dimensional distributions of temperature and velocity were analyzed. The melt‐crystal interface was found to have nearly rotational symmetry, and the azimuthal non‐uniformity of temperature is much weaker on the crystal and crucible sidewalls in the case of high rotation rates of crucible and crystal than in the case of non‐rotating crucible and crystal. (© 2005 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)