Synthesis of uniform CdS nanowires in high yield and its single nanowire electrical property
Synthesis of uniform CdS nanowires in high yield and its single nanowire electrical property
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高产率均匀镉纳米线的合成及其单根纳米线的电学性能
DOI：
10.1016/j.jssc.2009.07.016
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发表时间：
2009-10-01
影响因子：
3.3
通讯作者：
Xiao, Zhongdang
中科院分区：
文献类型：
--
作者：
Yan, Shancheng;Sun, Litao;Xiao, Zhongdang
采用快速简单的溶剂热法合成了大规模、高质量、直径均匀的US纳米线。场发射扫描电子显微镜（FESEM）和透射电子显微镜（TEM）图像显示，US纳米线的直径约为26 nm，长度可达几微米。高分辨透射电镜（HRTEM）研究表明CdS纳米线具有沿c轴方向沿着取向生长的单晶性质。利用紫外-可见吸收光谱、光致发光光谱和拉曼光谱对产物的光学性质进行了表征。采用基于场致发射理论的金属-半导体-金属模型，对单纳米线上测得的对称I-V曲线进行拟合，计算了单纳米线的电阻率、电子浓度和电子迁移率。(C)2009 Elsevier Inc. All rights reserved.
Large-scale high quality US nanowires with uniform diameter were synthesized by using a rapid and simple solvothermal route. Field emission scan electron microscopy (FESEM) and transmission electron microscopy (TEM) images show that the US nanowires have diameter of about 26 nm and length up to several micrometres. High resolution TEM (HRTEM) study indicates the single-crystalline nature of CdS nanowires with an oriented growth along the c-axis direction. The optical properties of the products were characterized by UV-vis absorption spectra, photoluminescence spectra and Raman spectra. The resistivity, electron concentration and electron mobility of single NW are calculated by fitting the symmetric I-V curves measured on single NW by the metal-semiconductor-metal model based on thermionic field emission theory. (C) 2009 Elsevier Inc. All rights reserved.