Weak antilocalization and zero-field electron spin splitting in AlxGa1-xN/AlN/GaN heterostructures with a polarization-induced two-dimensional electron gas
Weak antilocalization and zero-field electron spin splitting in AlxGa1-xN/AlN/GaN heterostructures with a polarization-induced two-dimensional electron gas
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DOI：
10.1103/physrevb.74.113308
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发表时间：
2006-09-01
影响因子：
3.7
通讯作者：
Litvinov, V. I.
中科院分区：
文献类型：
--
作者：
Kurdak, C.;Biyikli, N.;Litvinov, V. I.
利用量子干涉对AlxGa 1-xN/AlN/GaN二维电子系统电导的修正，研究了载流子浓度受持续光电导效应控制的自旋轨道耦合.所有研究的样品表现出弱的反局域化功能与自旋轨道场约1.8 mT。从弱反定域测量中提取的零场电子自旋分裂能与费米波矢（E-SS=2 α k（f））成线性关系，有效线性自旋轨道耦合参数α = 5.5 × 10 ~（-13）eV·m。从我们的测量中提取的自旋轨道时间在本实验的载流子密度范围内从0.74到8.24 ps变化。
Spin-orbit coupling is studied using the quantum interference corrections to conductance in AlxGa1-xN/AlN/GaN two-dimensional electron systems where the carrier density is controlled by the persistent photoconductivity effect. All the samples studied exhibit a weak antilocalization feature with a spin-orbit field of around 1.8 mT. The zero-field electron spin splitting energies extracted from the weak antilocalization measurements are found to scale linearly with the Fermi wave vector (E-SS=2 alpha k(f)) with an effective linear spin-orbit coupling parameter alpha=5.5x10(-13) eV m. The spin-orbit times extracted from our measurements varied from 0.74 to 8.24 ps within the carrier density range of this experiment.