SiC Schottky Diode surge current analysis and application design using behavioral SPICE models
SiC Schottky Diode surge current analysis and application design using behavioral SPICE models
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DOI：
10.1109/smicnd.2012.6400761
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发表时间：
2012-10
期刊：
影响因子：
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通讯作者：
V. Banu;P. Godignon;X. Jordà;M. Alexandru;J. Millán
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文献类型：
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作者：
V. Banu;P. Godignon;X. Jordà;M. Alexandru;J. Millán
本文给出了对压装封装的碳化硅肖特基二极管进行浪涌电流测试的热分析结果。一种基于行为SPICE模型的大电流脉冲期间温度评估的原始方法被用于接近分析。碳化硅(SIC)是制造高温大功率电子产品最合适的宽禁带材料之一。然而，实际生产的商用碳化硅功率二极管(肖特基和JBS)的最高结温仅为175°C。这种碳化硅器件的重要降温(理论上能够承受更高的温度)是由于封装限制。我们研究的目的是克服碳化硅器件封装的实际限制，并获得能够在300°C以上温度下运行的可靠的碳化硅器件。
This work presents thermal analysis results of surge current test performed on pressed-pack encapsulated SiC Schottky Diodes. An original method for temperature evaluation during high current pulses, based on behavioural SPICE models, was used to approach the analysis. Silicon Carbide (SiC) is one of the most adequate wide bandgap (WBG) material for manufacturing high temperature and high power electronics. However, the actual generation of commercially available SiC power diodes (Schottky and JBS) shows a maximum junction temperature of only 175°C. This important derating of the SiC devices, which theoretically are capable to sustain much higher temperatures, is due to the packaging limitation. The aim of our investigations is to overcome the actual limitations of SiC device packaging and to obtain reliable SiC devices able to operate at temperatures over 300°C.