Topological materials for helicity-dependent THz emission

Topological materials for helicity-dependent THz emission
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DOI：
10.1109/irmmw-thz57677.2023.10299323
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发表时间：
2023-09
期刊：
2023 48th International Conference on Infrared, Millimeter, and Terahertz Waves (IRMMW-THz)
影响因子：
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通讯作者：
A. Mannan;Y. Saboon;C. Q. Xia;D. Damry;P. Schoenherr;D. Prabhakaran;L. M. Herz;T. Hesjedal;M. B. Johnston;J. Boland
A. Mannan;Y. Saboon;C. Q. Xia;D. Damry;P. Schoenherr;D. Prabhakaran;L. M. Herz;T. Hesjedal;M. B. Johnston;J. Boland
中科院分区：
其他
文献类型：
--
作者：
A. Mannan;Y. Saboon;C. Q. Xia;D. Damry;P. Schoenherr;D. Prabhakaran;L. M. Herz;T. Hesjedal;M. B. Johnston;J. Boland

文献摘要

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拓扑绝缘体（TI）材料正成为自旋电子学应用的新型材料。在此，我们展示了狄拉克半金属Cd₃As₂纳米线的依赖于螺旋性的太赫兹发射，并使用散射式扫描近场光学显微镜（s - SNOM）来确定用于器件应用的潜在单根纳米线候选物。一根候选纳米线的初步研究数据显示，在中红外（MIR）范围内具有均匀的形貌和恒定的介电函数，这表明其高质量的晶体生长对于拓扑特性表征是理想的。
Topological insulator (TI) materials are emerging as novel materials for spintronic applications. Here, we demonstrate helicity-dependent THz emission from Dirac semi-metal Cd3As2 nanowires and used scattering-type scanning optical microscopy (s-SNOM) to identify potential single nanowire candidates for device applications. The preliminary investigation data of a candidate nanowire shows a homogenous topography and constant dielectric function in the MIR range. Indicating high-quality crystalline growth ideal for topological characterization.