Current-induced self-switching of perpendicular magnetization in CoPt single layer.
Current-induced self-switching of perpendicular magnetization in CoPt single layer.
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DOI：
10.1038/s41467-022-31167-w
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发表时间：
2022-06-20
影响因子：
16.6
通讯作者：
中科院分区：
文献类型：
--
作者：
垂直磁化的全电切换是将快速、高密度和低功率磁存储器和磁逻辑器件集成到电路中的先决条件。迄今为止，通过各种非对称设计，在SOT双层和三层系统中观察到垂直磁化的无场自旋轨道矩（SOT）开关，其主要目的是打破镜像对称。在这里，我们报告的CoxPt 100-x单层的垂直磁化在一个特殊的组成范围（20 < x < 56）可以确定性地切换由电流在没有外部磁场。具体而言，Co 30 Pt 70显示出最大的面外有效场效率和最佳的开关性能。我们证明，这种独特的属性来自两个结构机制的合作：在Co片/Pt界面的低晶体对称性和沿沿着厚度方向的成分梯度。与双层或三层结构相比，CoxPt 100-x单层结构的无场开关大大简化了SOT结构，避免了额外的非对称设计。基于自旋的电子学的一个挑战是在没有磁场的情况下控制和可靠地切换磁化。在这里，Liu等人研究了CoPt的各种成分，并确定了使开关性能最大化的具体成分，从而可能简化器件设计。
All-electric switching of perpendicular magnetization is a prerequisite for the integration of fast, high-density, and low-power magnetic memories and magnetic logic devices into electric circuits. To date, the field-free spin-orbit torque (SOT) switching of perpendicular magnetization has been observed in SOT bilayer and trilayer systems through various asymmetric designs, which mainly aim to break the mirror symmetry. Here, we report that the perpendicular magnetization of CoxPt100-x single layers within a special composition range (20 < x < 56) can be deterministically switched by electrical current in the absence of external magnetic field. Specifically, the Co30Pt70 shows the largest out-of-plane effective field efficiency and best switching performance. We demonstrate that this unique property arises from the cooperation of two structural mechanisms: the low crystal symmetry property at the Co platelet/Pt interfaces and the composition gradient along the thickness direction. Compared with that in bilayers or trilayers, the field-free switching in CoxPt100-x single layer greatly simplifies the SOT structure and avoids additional asymmetric designs. One challenge for spin-based electronics is the controlled and reliable switching of magnetization without magnetic fields. Here, Liu et al investigate a variety of compositions of CoPt, and determine the specific composition to maximize switching performance, potentially simplifying device design.
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影响因子：
4
作者：
WELLER, D;BRANDLE, H;NOTARYS, H
通讯作者：
NOTARYS, H
影响因子：
41.2
作者：
Fukami, Shunsuke;Zhang, Chaoliang;Ohno, Hideo
通讯作者：
Ohno, Hideo
通过反铁磁体/铁磁体/氧化物结构中的自旋轨道力矩实现垂直磁化的无场切换
影响因子：
38.3
作者：
Oh, Young-Wan;Baek, Seung-Heon Chris;Park, Byong-Guk
通讯作者：
Park, Byong-Guk
影响因子：
56.9
作者：
Liu, Luqiao;Pai, Chi-Feng;Buhrman, R. A.
通讯作者：
Buhrman, R. A.
影响因子：
29.4
作者：
Cespedes-Berrocal, David;Damas, Heloise;Rojas-Sanchez, Juan-Carlos
通讯作者：
Rojas-Sanchez, Juan-Carlos