STACKING TRANSFORMATION FROM HEXAGONAL TO CUBIC SIC INDUCED BY SURFACE RECONSTRUCTION : A SEED FOR HETEROSTRUCTURE GROWTH
STACKING TRANSFORMATION FROM HEXAGONAL TO CUBIC SIC INDUCED BY SURFACE RECONSTRUCTION : A SEED FOR HETEROSTRUCTURE GROWTH
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DOI：
10.1103/physrevlett.82.2107
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发表时间：
1999-03
影响因子：
8.6
通讯作者：
U. Starke;J. Schardt;J. Bernhardt;M. Franke;K. Heinz
中科院分区：
文献类型：
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作者：
U. Starke;J. Schardt;J. Bernhardt;M. Franke;K. Heinz
在六方晶SiC（0001）上，Si的富集促进了重构的sp33 p3 dR 30 ±相的形成，并在表面形成了立方堆积序列。重建最终解决由Si吸附原子在T4网站发现定量LEED晶体学。在s p3 3 p3 dR 30 ±相演化之前，STM观察到具有不同原子周期的类台结构.这种粗糙和Si富集状态的平滑化提供了用于形成改性堆叠序列的材料，该改性堆叠序列可以用作制备SiC多型异质结构的晶种。[S0031-9007（99）08644-5]
Promoted by Si enrichment during the formation of the reconstructed s p 3 3 p 3 dR30± phase on hexagonal SiC(0001) a cubic stacking sequence develops at the surface. The reconstruction is ultimately resolved to consist of Si adatoms in T4 sites as found by quantitative LEED crystallography. Prior to the s p 3 3 p 3 dR30± phase evolution mesalike structures with various atomic periodicities are observed by STM. Smoothening of this rough and Si enriched state provides the material for the formation of the modified stacking sequence which could serve as seed for preparation of SiC polytype heterostructures. [S0031-9007(99)08644-5]