Interpretation of lifetime and defect spectroscopy measurements by generalized rate equations
Interpretation of lifetime and defect spectroscopy measurements by generalized rate equations
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通过广义速率方程解释寿命和缺陷光谱测量
DOI：
10.1007/s10854-008-9616-2
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发表时间：
2008
期刊：
影响因子：
--
通讯作者：
B. Gruendig
中科院分区：
文献类型：
--
作者：
T. Hahn;S. Schmerler;S. Hahn;J. Niklas;B. Gruendig
我们介绍了一种新的方法来模拟半导体中电荷载流子与缺陷相互作用的动力学。建立了一套广义速率方程，它的数值解也能解释复杂缺陷模型中实验结果的许多细节。理论模型既不受缺陷数量的限制，也不受所考虑的缺陷类型的限制。对不同的实验结果进行了详细的仿真。详细分析了捕集器对不同实验方法的寿命测量的影响，并给出了利用寿命测量测定铁浓度的应用。
We introduce a new approach for modeling the dynamics of charge carrier interactions with defects in semiconductors starting from nearly first principles. A system of generalized rate equations was developed whose numerical solutions account for many details of experimental results also in the case of complex defect models. The theoretical model is neither restricted by the number nor by the type of defects under consideration. Details of simulations are presented for different experimental results. The influence of traps on lifetime measurements with different experimental methods is analyzed in detail and the Application to determine iron concentrations from lifetime measurements are shown.