Recent developments using TowerJazz SiGe BiCMOS platform for mmWave and THz applications
Recent developments using TowerJazz SiGe BiCMOS platform for mmWave and THz applications
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使用 TowerJazz SiGe BiCMOS 平台进行毫米波和太赫兹应用的最新进展
DOI：
10.1117/12.1518475
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发表时间：
2013
期刊：
影响因子：
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通讯作者：
M. Racanelli
中科院分区：
文献类型：
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作者：
A. Kar;D. Howard;E. Preisler;M. Racanelli
本文介绍了TowerJazz成熟的0.18μm SBC 18 SiGe BiCMOS工艺平台的SBC 18 H4工艺变体中的最高速度240 GHz/340 GHz FT/FMAX NPN。在50 GHz时，NFMIN约为2dB。我们还描述了FT/FMAX为240 GHz/280 GHz的前一代NPN在0.13μ mSiGe BiCMOS工艺平台SBC 13 H3上的集成。接下来，我们详细介绍了深硅通孔（DSV），硅通孔（TSV），高电阻率衬底，子场缝合和混合缝合能力集成到0.18μm SBC 18技术平台，以实现更高的性能和高度集成的产品设计。SBC 18 H3到厚膜SOI衬底的集成，基本上不变的FT和FMAX，也被描述。（1）一个四元相控阵70- 100 GHz宽带收发芯片，其平坦饱和功率大于5dBm，转换增益为33 dB;（2）一个全集成的W波段九元相控阵，其响应度为800 MV/W，接收机NETD为0.45K，积分时间为20 ms;（3）16单元4 × 4相控阵发射机，E面和H面扫描，在100- 110 GHz频率范围内最大EIRP为23-25 dBm，（4）200 GHz压控振荡器，输出功率为-7.25dBm，调谐范围为3.5%;（5）320 GHz的16元成像接收器阵列，在315 GHz处的响应度为18 KV/W，3dB带宽为25 GHz，NEP为34 pW/Hz ~（1/2）。本文还讨论了在TowerJazz SBC 18工艺中使用拼接技术实现相控阵和毫米波成像器的晶圆级大芯片实现。
In this paper, we report on the highest speed 240GHz/340GHz FT/FMAX NPN which is now available for product designs in the SBC18H4 process variant of TowerJazz’s mature 0.18μm SBC18 silicon germanium (SiGe) BiCMOS technology platform. NFMIN of ~2dB at 50GHz has been obtained with these NPNs. We also describe the integration of earlier generation NPNs with FT/FMAX of 240GHz/280GHz into SBC13H3, a 0.13μm SiGe BiCMOS technology platform. Next, we detail the integration of the deep silicon via (DSV), through silicon via (TSV), high-resistivity substrate, sub-field stitching and hybrid-stitching capability into the 0.18μm SBC18 technology platform to enable higher performance and highly integrated product designs. The integration of SBC18H3 into a thick-film SOI substrate, with essentially unchanged FT and FMAX, is also described. We also report on recent circuit demonstrations using the SBC18H3 platform: (1) a 4-element phased-array 70-100GHz broadband transmit and receive chip with flat saturated power greater than 5dBm and conversion gain of 33dB; (2) a fully integrated W-band 9-element phase-controllable array with responsivity of 800MV/W and receiver NETD is 0.45K with 20ms integration time; (3) a 16-element 4x4 phased-array transmitter with scanning in both the E- and H-planes with maximum EIRP of 23-25 dBm at 100-110GHz; (4) a power efficient 200GHz VCO with -7.25dBm output power and tuning range of 3.5%; and (5) a 320GHz 16-element imaging receiver array with responsivity of 18KV/W at 315GHz, a 3dB bandwidth of 25GHz and a low NEP of 34pW/Hz1/2. Wafer-scale large-die implementation of the phased-arrays and mmWave imagers using stitching in TowerJazz SBC18 process are also discussed.