Characterization of charge generated in silicon carbide n + p diodes using transient ion beam-induced current
Characterization of charge generated in silicon carbide n + p diodes using transient ion beam-induced current
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使用瞬态离子束感应电流表征碳化硅 np 二极管中产生的电荷
DOI：
10.1016/j.nima.2005.01.062
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发表时间：
2005
影响因子：
1.4
通讯作者：
Y. Fukushima
中科院分区：
文献类型：
--
作者：
T. Ohshima;T. Satoh;M. Oikawa;T. Yamakawa;S. Onoda;T. Wakasa;J. Laird;T. Hirao;T. Kamiya;H. Itoh;A. Kinoshita;R. Tanaka;I. Nakano;M. Iwami;Y. Fukushima
采用单离子撞击瞬态离子束感应电流（TIBIC），测量了15mev -氧（O4+）微束在n+p - 6H-SiC二极管中产生的瞬态电流。随着反向偏置的增加，瞬态电流的信号峰值增加，下降时间（定义为瞬态电流从90%衰减到10%的时间）减少。通过对TIBIC信号的积分估计了n+p 6H-SiC二极管中产生的电荷。结果表明，在反向偏压达到90V时，电荷收集值随反向偏压的增大而增大，在反向偏压达到100V以上时，电荷收集达到饱和状态。在110V以下的反向偏压下，由于漏斗效应，与耗尽层长度相比，较深区域产生的电荷被收集。当耗尽层长度大于15MeV-O4+离子的投射范围时，n+p SiC二极管在15MeV-O4+辐照下产生的电荷几乎全部被收集。伽玛射线（0.26MGy）辐照和未辐照样品的瞬态行为和电荷收集没有显著差异。
Using the single ion hit Transient Ion Beam Induced Current (TIBIC), the transient current generated in n+p 6H–SiC diodes by 15MeV-oxygen (O4+) microbeams was measured. The signal peak of the transient current increases, and the fall-time, which is defined as the decay time from 90% to 10% of the transient current, decreases with increasing applied reverse bias. The charge generated in n+p 6H–SiC diodes was estimated from the integration of the TIBIC signal. As the result, the value of collected charge increases with increasing applied reverse bias up to 90V, and the saturation of the collected charge was observed at reverse biases above 100V. At reverse biases below 110V, the charge generated in the deeper region as compared to the depletion layer length is collected due to the funneling effect. Almost all charge generated in n+p SiC diodes by 15MeV-O4+irradiation can be collected when the length of depletion layer becomes longer than the projection range of 15MeV-O4+ions. No significant difference in transient behavior and charge collection is observed between gamma-ray (0.26MGy) irradiated and non-irradiated samples.