A high voltage Dickson charge pump in SOI CMOS
A high voltage Dickson charge pump in SOI CMOS
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DOI：
10.1109/cicc.2003.1249448
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发表时间：
2003-12
期刊：
影响因子：
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通讯作者：
M. R. Hoque;T. McNutt;Jimmy Zhang;H. Mantooth;M. Mojarradi
中科院分区：
文献类型：
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作者：
M. R. Hoque;T. McNutt;Jimmy Zhang;H. Mantooth;M. Mojarradi
讨论了一种利用 MOSFET 体二极管作为电荷传输开关的改进电荷泵。对体二极管进行了表征，并开发了体二极管模型来模拟电荷泵电路。与传统的体 CMOS Dickson 电荷泵相比，绝缘体上硅 (SOI) Dickson 电荷泵的电压泵增益有所增加。 6 级 Dickson 电荷泵设计用于从 3.3 V 电源产生 20 V 输出，使用 4 MHz、两相非重叠时钟信号驱动电荷泵。该设计采用 0.35 /spl mu/m 部分耗尽 SOI CMOS 工艺制造。在负载电流约为 20 /spl mu/A 时可实现 72% 的效率。
An improved charge pump that utilizes a MOSFET body diode as a charge transfer switch is discussed. The body diode is characterized and a body diode model is developed for simulating the charge pump circuit. An increase in voltage pumping gain for a silicon-on-insulator (SOI) Dickson charge pump is demonstrated when compared with a traditional bulk CMOS Dickson charge pump. A 6-stage Dickson charge pump was designed to produce a 20 V output from a 3.3 V supply, using a 4 MHz, two-phase non-overlapping clock signal driving the charge pump. The design was fabricated in a 0.35 /spl mu/m partially depleted SOI CMOS process. An efficiency of 72% is achieved at a load current of approximately 20 /spl mu/A.