Low-frequency noise in strained SiGe core-shell nanowire p-channel field effect transistors
Low-frequency noise in strained SiGe core-shell nanowire p-channel field effect transistors
复制标题
DOI：
10.1063/1.3480424
复制
发表时间：
2010-08
影响因子：
4
通讯作者：
Doyoung Jang;Jae Woo Lee;K. Tachi;L. Montès;T. Ernst;Gyu-Tae Kim;G. Ghibaudo
中科院分区：
文献类型：
--
作者：
Doyoung Jang;Jae Woo Lee;K. Tachi;L. Montès;T. Ernst;Gyu-Tae Kim;G. Ghibaudo
研究了压缩应变Si0.8Ge0.2核壳纳米线(NW)p沟道晶体管的低频噪声，并与无应变NW进行了比较。利用载波数与迁移率相关的涨落模型对噪声进行了很好的解释。体陷阱密度nT在2.9×10 18-4.3×10 19 cm−3 eV−1范围内，与标准的高k平面器件相似。库仑和表面粗糙度散射的影响在无应变的SiGe NWS中更为显著。这一结果可以用SiGe NWS中心区更好的载流子限制来解释，这是由于压缩应变NWS中的额外带偏移造成的。
Low-frequency noise has been studied in compressively strained Si0.8Ge0.2 core-shell nanowire (NW) p-channel transistors compared with unstrained NWs. The noise has been well interpreted using the carrier number with correlated mobility fluctuation model. The volume trap density, Nt, lies in the range of 2.9×1018–4.3×1019 cm−3 eV−1, which is similar to standard high-k planar devices. The impact of Coulomb and surface roughness scatterings is more significant in unstrained SiGe NWs. This result can be explained by the better carrier confinement at the central region of SiGe NWs due to the additional band offset in the compressively strained NWs.