Indentation-Induced Selective Growth of Carbon Nanotubes
Indentation-Induced Selective Growth of Carbon Nanotubes
复制标题
压痕诱导碳纳米管的选择性生长
DOI：
10.1143/jjap.45.l800
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发表时间：
2006
期刊：
影响因子：
--
通讯作者：
S. Nishimura
中科院分区：
文献类型：
--
作者：
T. Yasui;S. Nishimura
采用催化-乙醇化学气相沉积（CVD）方法，在Co（8 nm）/Si衬底上，于700 ~ 900 °C下沉积10 min，在压痕区选择性生长了半导体碳纳米管（CNTs）。压痕过程中产生的局部压力形成亚稳态Si，抑制Co/Si结合，导致Co聚集，并作为压痕内CNT生长的催化剂。扫描电子显微镜（SEM）和拉曼光谱证实，碳纳米管是单壁纳米管或单壁纳米管束，并且这些质量在每个凹痕之间是均匀的。
Semiconductor carbon nanotubes (CNTs) have been selectively grown in an indented area formed on Co (8 nm)/Si substrates by catalytic-ethanol chemical vapor deposition (CVD) at 700 to 900 °C for 10 min. The local pressure caused by the indentation process formed metastable Si, inhibited Co/Si combinations, caused Co aggregation, and acted as a catalyst for CNT growth within indents. The CNTs were single-walled nanotubes or bundle of them, and those qualities were uniform between each of the indents, as confirmed by the scanning-electron microscopy (SEM) and Raman spectra.