VI3-a New Layered Ferromagnetic Semiconductor
VI3-a New Layered Ferromagnetic Semiconductor
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DOI：
10.1002/adma.201808074
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发表时间：
2019-04-25
影响因子：
29.4
通讯作者：
Cava, Robert J.
中科院分区：
文献类型：
--
作者：
Kong, Tai;Stolze, Karoline;Cava, Robert J.
2D材料是下一代电子设备很有前途的候选材料。在这种情况下，仍然很稀有的绝缘2D铁磁体具有特别重要的意义，因为它们具有实现新设备架构的潜力。这里报道了在层状范德华半导体VI3中发现的铁磁性，它是基于由碘-碘范德华间隙隔开的蜂窝状钒层。它在室温下具有BiI3型结构(R(3)在棒上，编号148)，实验证据表明，它在78K时可能经历一个微妙的结构相变。在49K时，VI3变为铁磁性，磁光Kerr效应成像清楚地显示出铁磁区，可以通过外加磁场来操纵铁磁区。由反射率测量确定的光学带隙为0.6 eV，材料具有很高的阻性。
2D materials are promising candidates for next-generation electronic devices. In this regime, insulating 2D ferromagnets, which remain rare, are of special importance due to their potential for enabling new device architectures. Here the discovery of ferromagnetism is reported in a layered van der Waals semiconductor, VI3, which is based on honeycomb vanadium layers separated by an iodine-iodine van der Waals gap. It has a BiI3-type structure (R (3) over bar, No.148) at room temperature, and the experimental evidence suggests that it may undergo a subtle structural phase transition at 78 K. VI3 becomes ferromagnetic at 49 K, below which magneto-optical Kerr effect imaging clearly shows ferromagnetic domains, which can be manipulated by the applied external magnetic field. The optical bandgap determined by reflectance measurements is 0.6 eV, and the material is highly resistive.