Metal oxide memories based on thermochemical and valence change mechanisms
Metal oxide memories based on thermochemical and valence change mechanisms
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DOI：
10.1557/mrs.2011.356
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发表时间：
2012-02-01
期刊：
影响因子：
5
通讯作者：
Hwang, Cheol Seong
中科院分区：
文献类型：
--
作者：
Yang, J. Joshua;Inoue, Isao H.;Hwang, Cheol Seong
本文回顾了了解电阻开关 (RS) 行为以及 RS 金属氧化物 (MO) 薄膜系统和器件性能改进的最新进展。不同的 RS MO 材料根据其开关机制和特性进行分类。对于每个类别，选择了一些有代表性的材料，并讨论了它们的特点。此外，还讨论了其他因素，例如器件结构，它在确定器件性能方面也起着至关重要的作用。当应用于实际电路（例如，交叉结构）时，需要考虑器件的特性/特性，包括开关的偏置极性、电流-电压关系、可靠性和缩放问题。由于许多 MO 材料中的非易失性 RS 主要与局部传导通道相关，因此了解电流路径结构的性质和动态变化至关重要，因此在此进行了详细回顾。还将提供材料和接入设备及其制造方法的选择指南。最后，本综述总结了用于半导体存储器的基于 MO 的电阻变化器件的前景和挑战。
This article reviews recent progress in understanding the resistive switching (RS) behavior and improvements in device performance of RS metal oxide (MO) thin-film systems and devices. The diverse RS MO materials are classified according to their switching mechanisms and characteristics. For each category, some representative materials are selected, and their characteristics are discussed. In addition, other factors such as the device structure, which also plays a crucial role in determining the device properties, are discussed as well. When applied in a real circuit (e.g., in a crossbar structure), there are device features/characteristics that need to be considered, including the bias polarity for switching, the current-voltage relationship, reliability, and scaling issues. Since nonvolatile RS in many MO materials is primarily associated with localized conduction channels, understanding the nature and the dynamic change of the current path structure is crucial and therefore is reviewed at length here. Guidelines for the choice of materials and access devices and their fabrication methods will also be provided. Finally, this review concludes with the outlook and challenges of MO-based resistance change devices for semiconductor memories.