Geometrical Shaping of InGaN Light-Emitting Diodes by Laser Micromachining
Geometrical Shaping of InGaN Light-Emitting Diodes by Laser Micromachining
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DOI：
10.1109/lpt.2009.2022751
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发表时间：
2009-05
影响因子：
2.6
通讯作者：
W. Fu;K. Hui;X. Wang;K. Wong;P. Lai;H. Choi
中科院分区：
文献类型：
--
作者：
W. Fu;K. Hui;X. Wang;K. Wong;P. Lai;H. Choi
介绍了InGaN发光二极管（LED）的激光微加工几何成形技术。蓝宝石衬底被成形为具有50度的倾斜侧壁，用作有利于光重定向的棱镜，用于从顶部窗口耦合出。与传统的长方体LED相比，计算出的光提取效率etaext为18.3%，这些形状的LED提供了高达85.2%的etaext的显着增加，通过实验结果验证。
Geometrical shaping of InGaN light-emitting diodes (LEDs) by laser micromachining is introduced. The sapphire substrate is shaped with inclined sidewalls at 50deg, serving as a prism favoring light redirection for out-coupling from the top window. Compared to conventional cuboid LEDs with a calculated light extraction efficiency etaext of 18.3%, these shaped LEDs offers a pronounced increase in etaext of up to 85.2%, verified by experimental results.