A 233-GHz low noise amplifier with 22.5dB gain in 0.13μm SiGe
A 233-GHz low noise amplifier with 22.5dB gain in 0.13μm SiGe
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采用 0.13μm SiGe 封装、具有 22.5dB 增益的 233GHz 低噪声放大器
DOI：
10.1109/eumic.2014.6997824
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发表时间：
2014
期刊：
影响因子：
--
通讯作者：
U. Pfeiffer
中科院分区：
文献类型：
--
作者：
S. Malz;B. Heinemann;U. Pfeiffer
提出了采用先进 SiGe 异质结双极晶体管技术的 230GHz 应用的低噪声放大器 (LNA) 设计。该电路由四级伪差分共源共栅拓扑组成。它采用 fT/fmax 为 300/450GHz 的商用 SiGe BiCMOS 技术实现。通过采用正反馈进行单边化，可以增加小信号增益，从而使电路能够在高频段运行并提高效率。该放大器在 233GHz 下测得 22.5dB 增益，3dB 带宽为 10GHz，模拟噪声系数为 12.5dB。低噪声放大器仅从 4V 电源汲取 17mA 电流。
A low noise amplifier (LNA) design for 230GHz applications in an advanced SiGe heterojunction bipolar transistor technology is presented. The circuit consists of a four-stage pseudo-differential cascode topology. It was implemented in a commercially available SiGe BiCMOS technology with fT/fmax of 300/450GHz. By employing positive feedback for unilateralization the small-signal gain is increased, enabling circuit operation in high frequency bands and improved efficiency. The amplifier has measured 22.5dB gain at 233GHz with a 3dB bandwidth of 10GHz and a simulated noise figure of 12.5dB. The low noise amplifier draws only 17mA from a 4V supply.