Lifetime characterization of capacitive RF MEMS switches
Lifetime characterization of capacitive RF MEMS switches
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DOI：
10.1117/12.590132
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发表时间：
2005-05
期刊：
影响因子：
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通讯作者：
A. Ziaei;T. Dean;J. Polizzi
中科院分区：
文献类型：
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作者：
A. Ziaei;T. Dean;J. Polizzi
RF MEMS开关为许多RF/微波应用提供了低成本、高性能的解决方案，这些开关将成为设计军用和商用移相器、开关滤波器和反射器阵列天线的重要构件。本文介绍了在高射频功率下THALES电容式MEMS器件的特性研究进展。介绍了一种基于高阻硅衬底的微波/毫米波电容式RFMEMS开关的设计、制作和测试。所测试的开关显示了1 W（30 dbm）的功率处理能力，用于连续RF功率。这些开关的可靠性在不同的功率水平下进行了测试，表明在连续的射频功率下。此外，电源故障及其相关的操作条件的描述。开发了基于PC的测试站，用于循环开关并测量DC和RF负载下的寿命。在30 dbm射频功率下，来自不同批次的几个开关的最佳情况寿命为1010次循环。
RF MEMS switches provide a low-cost, high performance solution to many RF/microwave applications and these switches will be important building blocks for designing phase shifters, switched filters and reflector array antennas for military and commercial markets. In this paper, progress in characterizing of THALES capacitive MEMS devices under high RF power is presented. The design, fabrication and testing of capacitive RF MEMS switches for microwave/mm- wave applications on high-resistivity silicon substrate is presented. The switches tested demonstrated power handling capabilities of 1W (30 dbm) for continuous RF power. The reliability of these switches was tested at various power levels indicating that under continuous RF power. In addition a description of the power failures and their associated operating conditions is presented. The PC-based test stations to cycle switches and measure lifetime under DC and RF loads have been developed. Best-case lifetimes of 1010 cycles have been achieved in several switches from different lots under 30 dbm RF power.