A hybrid memristor-CMOS XOR gate for nonvolatile logic computation
A hybrid memristor-CMOS XOR gate for nonvolatile logic computation
复制标题
用于非易失性逻辑计算的混合忆阻器-CMOS异或门
DOI：
10.1002/pssa.201532872
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发表时间：
2016
影响因子：
2
通讯作者：
Miao Xiangshui
中科院分区：
文献类型：
--
作者：
Zhou Yaxiong;Li Yi;Xu Lei;Zhong Shujing;Xu Ronggang;Miao Xiangshui
可以执行内存和逻辑运算的基于忆阻器的逻辑门是构建非冯·诺依曼计算架构的有前途的元素。在本文中，我们提出了一种基本的混合忆阻器-CMOS 非易失性 XOR 布尔逻辑块，具有一个忆阻器和四个压控开关，例如 MOSFET 或传输门。利用具有双极阻变行为的 Ag/Ag5In5Sb60Te30/Ta 结构忆阻器来实验演示该块的 XOR 功能。进一步，以异或逻辑块为基础，设计了全加器作为扩展电路实例，并通过HSPICE仿真进行了验证。我们的工作展示了忆阻器的内存逻辑功能，并提供了一种实现非易失性逻辑运算和构建并行计算系统的替代方法。
Memristor‐based logic gates that can execute memory and logic operations are promising elements for building non‐von Neumann computation architecture. In this paper, we proposed a fundamental hybrid memristor‐CMOS nonvolatile XOR Boolean logic block with one memristor and four voltage‐controlled switches, such as MOSFET or transmission gate. The Ag/Ag5In5Sb60Te30/Ta structure memristors with bipolar resistive switching behaviors were utilized to experimentally demonstrate the XOR function of the block. Further, with the XOR logic block as a basis, a full adder as an extensive circuit example was designed and verified by HSPICE simulation. Our work shows logic‐in‐memory capabilities with memristors, and provides an alternative way to implement nonvolatile logic operations and construct parallel computation systems.