Indium incorporation and emission properties of nonpolar and semipolar InGaN quantum wells
Indium incorporation and emission properties of nonpolar and semipolar InGaN quantum wells
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DOI：
10.1063/1.4719100
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发表时间：
2012-05
影响因子：
4
通讯作者：
Yuji Zhao;Q. Yan;Chia-Yen Huang;Shih-Chieh Huang;P. S. Hsu;Shinichi Tanaka;C. Pan;Y. Kawaguchi-
中科院分区：
文献类型：
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作者：
Yuji Zhao;Q. Yan;Chia-Yen Huang;Shih-Chieh Huang;P. S. Hsu;Shinichi Tanaka;C. Pan;Y. Kawaguchi-
我们报告铟掺入各种非极性和半极性的独立GaN衬底上的属性。电致发光特性和X射线衍射（XRD）分析表明半极性（202 <$1 <$$>）和（112 <$2）晶面具有最高的铟掺入率。我们还表明，铟的组成和极化相关的电场的影响的量子威尔斯（QWs）的发射波长。不同的幅度和方向的极化相关的电场为每个取向的结果在不同的电位分布的各种半极性和非极性量子阱，导致不同的发射波长在一个给定的铟组合物。
We report indium incorporation properties on various nonpolar and semipolar free-standing GaN substrates. Electroluminescence characterization and x-ray diffraction (XRD) analysis indicate that the semipolar (202¯1¯) and (112¯2) planes have the highest indium incorporation rate among the studied planes. We also show that both indium composition and polarization-related electric fields impact the emission wavelength of the quantum wells (QWs). The different magnitudes and directions of the polarization-related electric fields for each orientation result in different potential profiles for the various semipolar and nonpolar QWs, leading to different emission wavelengths at a given indium composition.