Simulations of laser-induced dynamics in free-standing thin silicon films
Simulations of laser-induced dynamics in free-standing thin silicon films
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DOI:
10.1007/s00339-017-1230-9
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发表时间:
2017-09
期刊:
影响因子:
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通讯作者:
T. Zier;E. S. Zijlstra;S. Krylow;Martin E. Garcia
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文献类型:
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作者:
T. Zier;E. S. Zijlstra;S. Krylow;Martin E. Garcia
Femtosecond-laser pulses can induce tremendous structural changes in materials. In most cases these changes are accompanied by a structural reconstruction of the materials’ surface. So far, ab initio methods were not able to simulate laser-excited materials with open boundary conditions, like, films due to technical problems. We have succeeded in overcoming these problems and in performing molecular dynamics simulations of laser-excited thin silicon films. This new stage of ab initio molecular dynamics simulations will influence widely the field of laser-excited solids in both, experiment and theory, allowing to address questions that were unreachable before. Our results indicate that for a moderate excitation strength a breathing mode is induced in the whole film in the direction perpendicular to the surface. In the high intensity regime we predict the time-evolution of experimentally accessible structure factor intensities dependent on the depth into the surface. The results indicate that the surfaces are more resilient than the film center to the femtosecond-laser excitation.