Direct Measurement of Polarization-Induced Fields in GaN/AlN by Nano-Beam Electron Diffraction.
Direct Measurement of Polarization-Induced Fields in GaN/AlN by Nano-Beam Electron Diffraction.
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DOI：
10.1038/srep28459
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发表时间：
2016-06-28
影响因子：
4.6
通讯作者：
Morales FM
中科院分区：
文献类型：
--
作者：
Carvalho D;Müller-Caspary K;Schowalter M;Grieb T;Mehrtens T;Rosenauer A;Ben T;García R;Redondo-Cubero A;Lorenz K;Daudin B;Morales FM
III族氮化物中的内置压电场可以作为最大化光电器件效率的道路上的路障。为了克服这一局限性，这些领域的适当表征是必要的。在这项工作中，纳米束电子衍射扫描透射电子显微镜模式已被用来同时测量应变状态和在GaN/AlN多量子阱系统中的感应压电场。
The built-in piezoelectric fields in group III-nitrides can act as road blocks on the way to maximizing the efficiency of opto-electronic devices. In order to overcome this limitation, a proper characterization of these fields is necessary. In this work nano-beam electron diffraction in scanning transmission electron microscopy mode has been used to simultaneously measure the strain state and the induced piezoelectric fields in a GaN/AlN multiple quantum well system.