Tunable InGaN quantum dot microcavity light emitters with 129 nm tuning range from yellow-green to violet

Tunable InGaN quantum dot microcavity light emitters with 129 nm tuning range from yellow-green to violet
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DOI:
10.1063/1.4994945
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发表时间:
2017-09
影响因子:
4
通讯作者:
Y. Mei;R. Xu;G. Weng;Huang Xu;L. Ying;Zhiwei Zheng;H. Long;Baoping Zhang;W. Hofmann;Jianping Liu;Jian Zhang;Mo Li
Y. Mei;R. Xu;G. Weng;Huang Xu;L. Ying;Zhiwei Zheng;H. Long;Baoping Zhang;W. Hofmann;Jianping Liu;Jian Zhang;Mo Li
中科院分区:
物理与天体物理2区
文献类型:
--
作者:
Y. Mei;R. Xu;G. Weng;Huang Xu;L. Ying;Zhiwei Zheng;H. Long;Baoping Zhang;W. Hofmann;Jianping Liu;Jian Zhang;Mo Li

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展示了一种基于电泵浦波长可调 InGaN 量子点 (QD) 的微腔 (MC) 打火机发射器,具有 129 nm 的大调谐范围。通过注入电流将多模发射光谱从 564 nm(黄绿)调节到 435 nm(紫色)。 MC光发射器具有双电介质分布式布拉格反射器结构和使用基板转移和激光剥离技术制造的铜基板。通过利用具有可调谐宽发射光谱的InGaN QD有源层和允许多纵向模式谐振的法布里-珀罗腔,发射光谱可以在几种特定腔模式之间调谐,这由增益增强因子决定。此外,在单个 MC 器件中观察到增益增强因子引起的 MC 发射模式的增强和抑制。作为第一个基于电驱动 III-V 族氮化物半导体的可调谐 MC 光发射器,调谐范围为 129 nm,该器件有望...
An electrically pumped wavelength-tunable InGaN quantum dot (QD) based microcavity (MC) lighter emitter with a large tuning range of 129 nm was demonstrated. The multi-mode emission spectrum was tuned by injected current from 564 nm (yellow-green) to 435 nm (violet). The MC light emitter is featured with a double dielectric distributed Bragg reflector structure and a copper substrate fabricated using substrate transfer and laser lift off techniques. By utilizing an InGaN QD active layer with a tunable broad emission spectrum and a Fabry-Perot cavity which allows multi-longitudinal mode resonating, the emission spectrum could be tuned among several particular cavity modes, which are decided by the gain enhancement factor. In addition, both the enhancement and suppression of MC emission modes caused by the gain enhancement factor were observed in a single MC device. As the first electrically driven III-V nitride semiconductor based tunable MC light emitter with a tuning range of 129 nm, the device is promis...