Tunable InGaN quantum dot microcavity light emitters with 129 nm tuning range from yellow-green to violet
Tunable InGaN quantum dot microcavity light emitters with 129 nm tuning range from yellow-green to violet
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DOI:
10.1063/1.4994945
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发表时间:
2017-09
影响因子:
4
通讯作者:
Y. Mei;R. Xu;G. Weng;Huang Xu;L. Ying;Zhiwei Zheng;H. Long;Baoping Zhang;W. Hofmann;Jianping Liu;Jian Zhang;Mo Li
中科院分区:
文献类型:
--
作者:
Y. Mei;R. Xu;G. Weng;Huang Xu;L. Ying;Zhiwei Zheng;H. Long;Baoping Zhang;W. Hofmann;Jianping Liu;Jian Zhang;Mo Li
An electrically pumped wavelength-tunable InGaN quantum dot (QD) based microcavity (MC) lighter emitter with a large tuning range of 129 nm was demonstrated. The multi-mode emission spectrum was tuned by injected current from 564 nm (yellow-green) to 435 nm (violet). The MC light emitter is featured with a double dielectric distributed Bragg reflector structure and a copper substrate fabricated using substrate transfer and laser lift off techniques. By utilizing an InGaN QD active layer with a tunable broad emission spectrum and a Fabry-Perot cavity which allows multi-longitudinal mode resonating, the emission spectrum could be tuned among several particular cavity modes, which are decided by the gain enhancement factor. In addition, both the enhancement and suppression of MC emission modes caused by the gain enhancement factor were observed in a single MC device. As the first electrically driven III-V nitride semiconductor based tunable MC light emitter with a tuning range of 129 nm, the device is promis...