Interface effect on the photocurrent: A comparative study on Pt sandwiched (Bi3.7Nd0.3)Ti3O12 and Pb(Zr0.2Ti0.8)O3 films
Interface effect on the photocurrent: A comparative study on Pt sandwiched (Bi3.7Nd0.3)Ti3O12 and Pb(Zr0.2Ti0.8)O3 films
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DOI：
10.1063/1.3427500
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发表时间：
2010-05
影响因子：
4
通讯作者：
Dawei Cao;Jie Xu;Liang Fang;Wen Dong;F. Zheng;M. Shen
中科院分区：
文献类型：
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作者：
Dawei Cao;Jie Xu;Liang Fang;Wen Dong;F. Zheng;M. Shen
研究并比较了用溶胶-凝胶法制备的(Bi3.7Nd0.3)Ti3O12(BNT)和PZT(Zr0.2Ti0.8)O_3(PZT)薄膜的光电性能。通过对薄膜的光电特性和I-V特性的分析，发现与PZT相比，BNT的上下界面肖特基势垒更加对称。尽管两种薄膜的极化方向大致相同，但由于铁电极化取向而产生的退偏场产生的光电流有所不同。讨论了铂/BNT/铂和铂/PZT/铂电容器不同光电流行为的机理。
We investigated and compared the photoelectric behavior of the Pt sandwiched (Bi3.7Nd0.3)Ti3O12 (BNT) and Pb(Zr0.2Ti0.8)O3 (PZT) films deposited by sol-gel method. Based on the analysis of the photocurrent and I-V characteristics, the top and bottom Pt/film interface Schottky barriers are found to be more symmetric in BNT, compared to that in PZT. The photocurrents originated from the depolarization field due to the alignment of ferroelectric polarization are different, although the polarizations of the two films are about the same. The mechanism behind the origin of the different photocurrent behaviors between Pt/BNT/Pt and Pt/PZT/Pt capacitors was discussed.