Effect of the HfO2 passivation on HfS2 Transistors

Effect of the HfO2 passivation on HfS2 Transistors
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DOI：
10.1109/nano.2016.7751508
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发表时间：
2016-08
期刊：
2016 IEEE 16th International Conference on Nanotechnology (IEEE-NANO)
影响因子：
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通讯作者：
T. Kanazawa;T. Amemiya;V. Upadhyaya;A. Ishikawa;K. Tsuruta;T. Tanaka;Y. Miyamoto
T. Kanazawa;T. Amemiya;V. Upadhyaya;A. Ishikawa;K. Tsuruta;T. Tanaka;Y. Miyamoto
中科院分区：
其他
文献类型：
--
作者：
T. Kanazawa;T. Amemiya;V. Upadhyaya;A. Ishikawa;K. Tsuruta;T. Tanaka;Y. Miyamoto

文献摘要

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Hafnium Disulfide (HfS2) is one of the transition metal dichalcogenides which is expected to have high electron mobility and finite bandgap. However, the fabrication process for HfS2 based electron devices has not been established, and it is required to bring out the superior transport properties of HfS2. In this report, we have investigated the effects of ALD HfO2 passivation on the current properties of HfS2 Transistors. HfO2 passivation of HfS2 surface achieved the improvement in drain current and significant reduction of hysteresis. The charge trapping at the outermost surface seems to be the dominant factor for degradation of the current stability.