Continuous semiempirical model for the current-voltage characteristics of tunnel fets
Continuous semiempirical model for the current-voltage characteristics of tunnel fets
复制标题
隧道场效应管电流-电压特性的连续半经验模型
DOI：
10.1109/ulis.2014.6813897
复制
发表时间：
2014
期刊：
影响因子：
--
通讯作者：
A. Seabaugh
中科院分区：
文献类型：
--
作者：
Hao Lu;Jung Whan Kim;D. Esseni;A. Seabaugh
基于Kane-Sze公式，提出了一种描述隧道场效应晶体管(TFET)电流-电压特性的简单解析模型。该模型捕捉到了TFET的独特特性，包括亚阈值摆幅随漏极电流的减小以及输出特性的超线性起始。该模型具有较普遍的有效性，并不适用于特定的TFET几何结构。与已发表的栅极垂直于隧道结的InAs双栅TFET的原子模拟和栅平行于隧道结的断隙AlGaSb/InAs TFET的数值模拟结果吻合较好。
A simple analytic model based on the Kane-Sze formula is proposed to describe the current-voltage characteristics of tunnel field-effect transistors (TFETs). This model captures the unique features of the TFET including the decrease in subthreshold swing with drain current and the superlinear onset of the output characteristic. The model has fairly general validity and is not specific to a particular TFET geometry. Good agreement is shown with published atomistic simulations of an InAs double-gate TFET with gate perpendicular to the tunnel junction and with numerical simulations of a broken-gap AlGaSb/InAs TFET with gate in parallel with the tunnel junction.