Nanoscale patterning of graphene through femtosecond laser ablation
Nanoscale patterning of graphene through femtosecond laser ablation
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DOI：
10.1063/1.4864616
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发表时间：
2014-02-03
影响因子：
4
通讯作者：
Akturk, S.
中科院分区：
文献类型：
--
作者：
Sahin, R.;Simsek, E.;Akturk, S.
报道了利用飞秒激光在SiO_2/Si衬底上实现单层石墨烯的纳米级图案化。在石墨烯的单脉冲烧蚀阈值附近调节脉冲注量。结果表明，尽管与石墨烯相比，SiO_2和Si在线性区域都有更多的吸收，但在此过程中衬底可以保持完好。这是通过在激光照射下以在特定点处产生几个重叠脉冲的速度扫描样品来实现的，从而有效地屏蔽了衬底。通过调节激光通量和平移速度，可以在100微米以上实现400 nm宽的烧蚀通道。如果在通道之间留有足够的间隙，则样品的栅格扫描会产生有序的周期性结构。通过扫描电子显微镜和拉曼光谱研究，验证了石墨烯在无衬底损伤的情况下形成纳米图形的可行性。(C)2014 AIP出版有限责任公司。
We report on nanometer-scale patterning of single layer graphene on SiO2/Si substrate through femtosecond laser ablation. The pulse fluence is adjusted around the single-pulse ablation threshold of graphene. It is shown that, even though both SiO2 and Si have more absorption in the linear regime compared to graphene, the substrate can be kept intact during the process. This is achieved by scanning the sample under laser illumination at speeds yielding a few numbers of overlapping pulses at a certain point, thereby effectively shielding the substrate. By adjusting laser fluence and translation speed, 400 nm wide ablation channels could be achieved over 100 mu m length. Raster scanning of the sample yields well-ordered periodic structures, provided that sufficient gap is left between channels. Nanoscale patterning of graphene without substrate damage is verified with Scanning Electron Microscope and Raman studies. (C) 2014 AIP Publishing LLC.